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| WFF4N60 Silicon N-Channel MOSFET Features 4A,600V,RDS(on)(Max 2.2)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 0.26 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 2.5* 16* 30 240 10 4.5 33 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 600 4* Units V A *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 3.79 62.5 Units /W /W Rev.A Sep.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFF4N60 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=600V,VGS=0V Min 30 600 2 - Type - Max 100 10 100 Unit nA V A A V V Drain cut -off current IDSS VDS=480V,Tc=125 Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) Ciss Crss Coss tr ton tf toff ID=250 A,VGS=0V VDS=10V,ID=250 A VGS=10V,ID=3.25A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=4.4A RG=25 (Note4,5) VDD=480V, 1.8 545 70 8 10 35 45 20 16 3.4 7 4 2.2 670 90 11 30 80 pF ns 100 50 20 nC - - Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=4.4A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=4.4A,VGS=0V IDR=4.4A,VGS=0V, dIDR / dt =100 A / s Min - Type 390 2.2 Max 4 17.6 1.4 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=4.4A,VDD=50V,RG=0 ,Starting TJ=25 3.ISD4A,di/dt200A/us,VDD Steady, all for your advance WFF4N60 Fig.1 On-State Characteristics Fig.2 Transfer Current characteristics Fig.3 On Resistance variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation vs Source Current and temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFF4N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance WFF4N60 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFF4N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFF4N60 TO-220F Package Dimension Unit:mm 7/7 Steady, all for your advance |
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